Efficient transistor structure

ABSTRACT

An integrated circuit comprises a first drain region having a generally rectangular shape. First, second, third and fourth source regions have a generally rectangular shape and that are arranged adjacent to sides of the first drain region. A gate region is arranged between the first, second, third and fourth source regions and the first drain region. First, second, third and fourth substrate contact regions that are arranged adjacent to corners of the first drain region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.11/524,113 filed Sep. 20, 2006, which application claims the benefit ofU.S. Provisional Application Nos. 60/825,517, filed Sep. 13, 2006,60/824,357, filed Sep. 1, 2006, 60/823,332, filed on Aug. 23, 2006,60/821,008, filed Aug. 1, 2006 and 60/798,568, filed on May 8, 2006 andis a continuation-in-part of U.S. patent application Ser. No. 11/252,010filed on Oct. 17, 2005 now U.S. Pat. No. 7,164,176, which is acontinuation of U.S. patent application Ser. No. 10/691,237 filed onOct. 22, 2003 now U.S. Pat. No. 7,091,565. The disclosure of the aboveapplication is incorporated herein by reference in its entirety.

FIELD OF THE INVENTION

The present invention relates to transistor structures, and moreparticularly to transistor structures with reduced chip area.

BACKGROUND OF THE INVENTION

Integrated circuits or chips may include a large number ofinterconnected transistors. The transistors and other circuit elementsare interconnected in various ways to provide desired circuit functions.It is usually most efficient to fabricate multiple integrated circuitson a single wafer. After processing, the integrated circuits that arefabricated on the wafer are separated and then packaged. The wafer canaccommodate a fixed number of integrated circuits for a given integratedcircuit size. Reducing the size of individual transistors in theintegrated circuit may help to reduce the overall size of the integratedcircuit. This, in turn, allows an increased number of integratedcircuits or chips to be made on each wafer and reduces the cost of theintegrated circuits.

Referring now to FIGS. 1 and 2, an exemplary transistor 10 includes adrain 12, a gate 14, a source 16 and a body 18 or substrate tap. Forexample, the transistor 10 in FIG. 1 is an NMOS transistor. In somecircumstances, the body 18 is connected to the source 16 as shown inFIG. 2.

Referring now to FIG. 3, the body 18 includes a p⁺ region and mayinclude a contact tap 30. The source 16 includes an n⁺ region and mayinclude a contact tap 32. The drain 12 includes an n⁺ region and mayinclude a contact tap 34. Additional transistors may be fabricated onone or sides of the transistor 10 as indicated by “ . . . ” in FIG. 3.

Referring now to FIG. 4, the body 18 may be repeated between sources 16of adjacent transistors. The body 18 takes up valuable chip area andincreases the size of the transistor and the integrated circuit.Additional transistors can be arranged on one or more sides of thetransistor 10 as shown by “ . . . ” in FIG. 4.

SUMMARY OF THE INVENTION

An integrated circuit comprises a first source, a first drain, a secondsource, a first gate arranged between the first source and the firstdrain, and a second gate arranged between the first drain and the secondsource. The first and second gates define alternating first and secondregions in the drain. The first and second gates are arranged fartherapart in the first regions than in the second regions.

In other features, a well substrate contact is arranged in the firstregions. Alternatively, R well substrate contacts are arranged in thefirst regions, where R is an integer greater than one. R is an integerthat is greater than three and less than seven. The integrated circuitincludes a plurality of transistors. The transistors include PMOStransistors. The R well substrate contacts are associated withrespective ones of R transistors.

In other features, the integrated circuit comprises a second drain; anda third gate arranged between the second source and the second drain.The second and third gates define alternating third and fourth regions.The second and third gates are arranged farther apart in the thirdregions than in the fourth regions.

In yet other features, the first regions are arranged adjacent to thefourth regions and the second regions are arranged adjacent to the thirdregions. The first and third regions include R well substrate contacts.

A method for providing an integrated circuit comprises providing a firstsource; providing a first drain; providing a second source; locating afirst gate between the first source and the first drain; locating asecond gate between the first drain and the second source; definingalternating first and second regions in the drain using the first andsecond gates; and arranging the first and second gates farther apart inthe first regions as compared to the second regions.

In other features, the method includes locating a well substrate contactin the first regions. The method includes locating R well substratecontacts in the first regions, where R is an integer greater than one. Ris an integer that is greater than three and less than seven. Theintegrated circuit includes a plurality of transistors. The transistorsinclude PMOS transistors. The method includes associating the R wellsubstrate contacts with respective ones of R transistors.

In other features, the method includes providing a second drain;providing a third gate between the second source and the second drain;defining alternating third and fourth regions using the second and thirdgates; and arranging the second and third gates are arranged fartherapart in the third regions than in the fourth regions.

In other features, the method includes arranging the first regionsadjacent to the fourth regions and the second regions adjacent to thethird regions. The first and third regions include R well substratecontacts, where R is an integer greater than one.

An integrated circuit comprises a first drain region having a generallyrectangular shape. First, second, third and fourth source regions have agenerally rectangular shape and are arranged adjacent to sides of thefirst drain region. A gate region is arranged between the first, second,third and fourth source regions and the first drain region. First,second, third and fourth substrate contact regions are arranged adjacentto corners of the first drain region.

In other features, the first, second, third and fourth source regionshave a length that is substantially equal to a length of the drainregion. The first, second, third and fourth source regions have a widththat is less than a width of the first drain region. The width of thefirst, second, third and fourth source regions is approximately one-halfthe width of the first drain region.

In other features, a second drain region has a generally rectangularshape and has one side that is arranged adjacent to the first sourceregion. Fifth, sixth and seventh source regions have a generallyrectangular shape. The fifth, sixth and seventh source regions arearranged adjacent to other sides of the second drain region.

In other features, a gate region is arranged between the first, fifth,sixth and seventh source regions and the second drain region. Fifth andsixth substrate contact regions are arranged adjacent to corners of thesecond drain region. The integrated circuit includes laterally-diffusedMOSFET transistors.

A method for providing an integrated circuit comprises providing a firstdrain region having a generally rectangular shape; arranging sides offirst, second, third and fourth source regions, which have a generallyrectangular shape, adjacent to sides of the first drain region;arranging a gate region between the first, second, third and fourthsource regions and the first drain region; and arranging first, second,third and fourth substrate contact regions adjacent to corners of thefirst drain region.

In other features, the first, second, third and fourth source regionshave a length that is substantially equal to a length of the drainregion. The first, second, third and fourth source regions have a widththat is less than a width of the first drain region. The width of thefirst, second, third and fourth source regions is approximately one-halfthe width of the first drain region.

In other features, the method includes arranging one side of a seconddrain region, which has a generally rectangular shape, adjacent to thefirst source region; and arranging fifth, sixth and seventh sourceregions, which have a generally rectangular shape, adjacent to othersides of the second drain region. The method includes arranging a gateregion between the first, fifth, sixth and seventh source regions andthe second drain region. The method includes arranging fifth and sixthsubstrate contact regions adjacent to corners of the second drainregion. The integrated circuit includes laterally-diffused MOSFETtransistors.

An integrated circuit comprises a first drain region having a symmetricshape across at least one of horizontal and vertical centerlines. Afirst gate region has a first shape that surrounds the first drainregion. A second drain region has the symmetric shape. A second gateregion has the first shape that surrounds the second drain region. Aconnecting gate region connects the first and second gate regions. Afirst source region is arranged adjacent to and on one side of the firstgate region, the second gate region and the connecting gate region. Asecond source region is arranged adjacent to and on one side of side ofthe first gate region, the second gate region and the connecting gateregion.

In other features, the symmetric shape tapers as a distance from acenter of the symmetric shape increases. First and second substratecontacts are arranged in the first and second source regions. Theintegrated circuit includes laterally-diffused MOSFET transistors.

In other features, the symmetric shape is a circular shape. Thesymmetric shape is an elliptical shape. The symmetric shape is apolygonal shape. The symmetric shape is a hexagonal shape.

A method for providing an integrated circuit comprises providing a firstdrain region having a symmetric shape across at least one of horizontaland vertical centerlines; providing a first gate region having a firstshape that surrounds the first drain region; providing a second drainregion having the symmetric shape; providing a second gate region havingthe first shape that surrounds the second drain region; connecting aconnecting gate region to the first and second gate regions; arranging afirst source region adjacent to and on one side of the first gateregion, the second gate region and the connecting gate region; andarranging a second source region adjacent to and on one side of side ofthe first gate region, the second gate region and the connecting gateregion.

In other features, the symmetric shape tapers as a distance from acenter of the symmetric shape increases. In other features, the methodincludes arranging first and second substrate contacts in the first andsecond source regions. The integrated circuit includeslaterally-diffused MOSFET transistors.

In other features, the symmetric shape is a circular shape. Thesymmetric shape is an elliptical shape. The symmetric shape is apolygonal shape. The symmetric shape is a hexagonal shape.

An integrated circuit comprises first and second drain regions having agenerally rectangular shape. First, second and third source regions thathave a generally rectangular shape, wherein the first source region isarranged between first sides of the first and second drain regions andthe second and third source regions are arranged adjacent to secondsides of the first and second drain regions. A fourth source region isarranged adjacent to third sides of the first and second drain regions.A fifth source region is arranged adjacent to fourth sides of the firstand second drain regions. A gate region is arranged between the first,second, third, fourth and fifth source regions and the first and seconddrain regions. First and second drain contacts are arranged in the firstand second drain regions.

A method for providing an integrated circuit comprises providing firstand second drain regions having a generally rectangular shape; arranginga first source region between first sides of the first and second drainregions; arranging second and third source regions adjacent to secondsides of the first and second drain regions; arranging a fourth sourceregion adjacent to third sides of the first and second drain regions;arranging a fifth source region adjacent to fourth sides of the firstand second drain regions; arranging a gate region between the first,second, third, fourth and fifth source regions and the first and seconddrain region; and arranging first and second drain contacts in the firstand second drain regions.

In other features of the integrated circuit and method, the first,second and third source regions have a length that is substantiallyequal to a length of the first drain region and wherein the fourth andfifth source regions have a length that is greater than or equal to alength of the first and second drain regions. The first, second andthird source regions have a width that is less than a width of the firstdrain region. The width of the first, second and third source regions isapproximately one-half the width of the first drain region. The fourthand fifth source regions are driven from sides thereof. The first andsecond drain contacts have a size that is greater than a minimum draincontact size. The drain contacts have one of a regular shape and anirregular shape. The drain contacts are one of square, rectangular, andcross-shaped. The first, second and third source regions include sourcecontacts. The first and second drain regions and the firs, second andthird source regions are arranged in a first row and further comprisingN additional rows, wherein drain regions of at least one of the Nadditional rows share one of the fourth and fifth source regions.

An integrated circuit comprises first and second drain regions having agenerally rectangular shape. First, second and third source regions thathave a generally rectangular shape, wherein the first source region isarranged between first sides of the first and second drain regions andthe second and third source regions are arranged adjacent to secondsides of the first and second drain regions. A fourth source region isarranged adjacent to third sides of the first and second drain regions.A fifth source region is arranged adjacent to fourth sides of the firstand second drain regions. A gate region is arranged between the first,second, third, fourth and fifth source regions and the first and seconddrain regions. First and second drain contacts are arranged in the firstand second drain regions.

A method for providing an integrated circuit comprises providing firstand second drain regions having a generally rectangular shape; arranginga first source region between first sides of the first and second drainregions; arranging second and third source regions adjacent to secondsides of the first and second drain regions; arranging a fourth sourceregion adjacent to third sides of the first and second drain regions;arranging a fifth source region adjacent to fourth sides of the firstand second drain regions; arranging a gate region between the first,second, third, fourth and fifth source regions and the first and seconddrain region; and arranging first and second drain contacts in the firstand second drain regions.

In other features of the integrated circuit and method, the first,second and third source regions have a length that is substantiallyequal to a length of the first drain region and wherein the fourth andfifth source regions have a length that is greater than or equal to alength of the first and second drain regions. The first, second andthird source regions have a width that is less than a width of the firstdrain region. The width of the first, second and third source regions isapproximately one-half the width of the first drain region. The fourthand fifth source regions are driven from sides thereof. The first andsecond drain contacts have a size that is greater than a minimum draincontact size. The drain contacts have one of a regular shape and anirregular shape. The drain contacts are one of square, rectangular, andcross-shaped. The first, second and third source regions include sourcecontacts. The first and second drain regions and the firs, second andthird source regions are arranged in a first row and further comprisingN additional rows, wherein drain regions of at least one of the Nadditional rows share one of the fourth and fifth source regions.

Further regions of applicability of the present invention will becomeapparent from the detailed description provided hereinafter. It shouldbe understood that the detailed description and specific examples, whileindicating the preferred embodiment of the invention, are intended forpurposes of illustration only and are not intended to limit the scope ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from thedetailed description and the accompanying drawings, wherein:

FIG. 1 is an electrical symbol for a transistor with a drain, source,gate and body according to the prior art;

FIG. 2 is an electrical symbol for a transistor with a drain, source,gate and body, which is connected to the source according to the priorart;

FIG. 3 is an exemplary layout of the transistor of FIG. 2 according tothe prior art;

FIG. 4 is an exemplary layout of multiple transistors that are arrangedin a row according to the prior art;

FIG. 5A is a first exemplary layout of transistors including a body thatis arranged in the source;

FIG. 5B is a second exemplary layout of transistors including a bodyhaving edges that align with the gates in plan view;

FIG. 6 is a second exemplary layout of transistors including a body thatis arranged in the source;

FIG. 7 is a third exemplary layout of transistors including a body thatis arranged in the source;

FIG. 8 is a fourth exemplary layout of transistors including a body thatis arranged in the source;

FIG. 9 is a fifth exemplary layout of transistors including a body thatis arranged in the source;

FIG. 10 is a cross-sectional view of a PMOS transistor according to theprior art;

FIG. 11 is a plan view of a sixth exemplary layout including wellsubstrate contacts;

FIG. 12A is a plan view of a seventh exemplary layout for reducingR_(DSon);

FIG. 12B is a plan view of the seventh exemplary layout of FIG. 12A;

FIG. 12C is a plan view of an eighth exemplary layout for reducingR_(DSon);

FIG. 12D is a plan view of a ninth exemplary layout for reducingR_(DSon) that is similar to FIG. 12C;

FIG. 12E is a plan view of a tenth exemplary layout for reducingR_(DSon) that is similar to FIG. 12C;

FIGS. 12F-12I illustrate other exemplary drain contacts;

FIG. 13 is a plan view of a eleventh exemplary layout for reducingR_(DSon); and;

FIG. 14 is a plan view of a twelfth exemplary layout for reducingR_(DSon);

FIG. 15 is a plan view of a thirteenth exemplary layout for reducingR_(DSon);

FIG. 16A is a functional block diagram of a hard disk drive;

FIG. 16B is a functional block diagram of a DVD drive;

FIG. 16C is a functional block diagram of a high definition television;

FIG. 16D is a functional block diagram of a vehicle control system;

FIG. 16E is a functional block diagram of a cellular phone;

FIG. 16F is a functional block diagram of a set top box; and

FIG. 16G is a functional block diagram of a media player.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The following description of the preferred embodiment(s) is merelyexemplary in nature and is in no way intended to limit the invention,its application, or uses. For purposes of clarity, the same referencenumbers will be used in the drawings to identify the same elements.Additional transistors can be arranged on one or more sides of theillustrated transistors that are shown in the FIGS. as indicated by “ .. .” in the FIGS.

Referring now to FIGS. 5A and 5B, a transistor 50 according to thepresent invention is shown to include one or more sources 54 and one ormore drains 56. The sources 54 and the drains 56 include n⁺ regions.While an NMOS transistor is shown, skilled artisans will appreciate thatthe present invention also applies to other types of transistors such asPMOS transistors. Gates 58 are located between adjacent pairs of sources54 and drains 56. In one implementation, the gates 58 that are locatedon opposite sides of the sources 54 are connected together as shown at64. In other configurations, however, the gates 58 need not be connectedtogether.

A body 66 including a p⁺ region is arranged inside of and is surroundedby the source 54. The body 66 preferably has a shape that tapers as adistance between a midportion of the body 66 and adjacent gatesdecreases. The body 66 may touch or not touch the gates 58 in the planviews of FIGS. 5A and 5B. In other words, one or both edges of the body66 may be spaced from the gates 58 in plan view (as shown in FIG. 5A)and/or substantially aligns with the gates in plan view (as shown inFIG. 5B). By utilizing some of the area of the source 54 for the body66, the overall size of the transistor 50 is reduced as compared toconventional transistors. In the exemplary implementation that is shownin FIG. 5, the body 66 has a diamond shape.

Referring now to FIGS. 6 and 7, other exemplary shapes for the body 66are shown. In FIG. 6, the body 66 has a hexagon shape. In FIG. 7, thebody is generally football shaped. Skilled artisans will appreciate thatthere are a wide variety of other suitable shapes. For example, acircular body is shown in FIG. 8, which is described. Other suitableshapes include an ellipse, an octagon, etc.

Referring now to FIGS. 8 and 9, the gates 58 can be arranged such thatthey are closer together when there are no contact taps and furtherapart when there are contact taps. In FIG. 8, a source contact tap 70,which is not located in the body 66, is located in a region where theadjacent gates 58 are located farther apart. In FIG. 9, a body contacttap 80, which is located in the body 66, is located in the source 54where the adjacent gates 58 are located farther apart.

Referring now to FIG. 10, a PMOS transistor 120 is shown. The transistor120 includes a gate contact 122, a source contact 126, a drain contact128 and a negative (N)-well contact 130. The source contact 126 providesa connection to a P++ region 134 formed an N-type substrate layer 138.The N-type layer 138, in turn, is formed in a P-type substrate 140. TheP++ region 134 forms the source. The drain contact 128 provides anelectrical connection to a P++ region 136 formed in the N-type layer138. The P++ region 136 forms the drain. The N-well contact 130 providesa connection to an N++ region 141 or N-well.

Referring now to FIG. 11, a plan view of a sixth exemplary layout isshown. For some transistor designs such as PMOS and/or NMOS transistors,electrostatic discharge (ESD) is less important than other designcriteria. Therefore, N-well contact areas can be minimized. For PMOStransistors, the N-well contact area may be approximately 2.5 to 3 timesthe area in NMOS transistors. The source-drain resistance may be lessimportant. Therefore, the layout in FIG. 11 minimizes the N-well contactareas and the source-drain area. Skilled artisans will appreciate thatwhile the foregoing description relates to PMOS transistors, similarprinciples apply to NMOS transistors.

In a layout shown in FIG. 11, gate regions 200-1, 200-2, . . . , and200-G (collectively gate regions or gates 200) are defined betweensource regions 224-1, 224-2, . . . , and 224-S (collectively sourceregions 224) and drain regions 220-1, 220-2, . . . , and 220-D(collectively drain regions 220). Adjacent gates 200-1 and 200-2 defineregions 210 having a wider width than adjacent regions 212 havingnarrower widths. Drain regions 220 and source regions 224 arealternately defined between the adjacent gates 200.

Groups of transistors 230-11, 230-12, . . . , and 230-XY (collectivelygroups of transistors 230) are arranged adjacent to each other. Adjacentgroups of transistors 230 share R N-well contacts 260, where R is aninteger greater than one. The R N-well contacts 260 can be locatedbetween the adjacent groups of transistors 230 in regions 210 where thegates 200 are spaced further apart.

The source-drain area is minimized by this layout. For example, eachgroup may include 4-6 transistors. The R N-well contacts 260 areprovided for adjacent groups in both vertical and horizontal directions.Therefore, abutting edges of the adjacent groups without the R N-wellcontacts 260 can be located in regions 212 where the gates are spacedcloser together. In other words, the gates 200 can be arranged closertogether to minimize areas of the regions 212 without the R N-wellcontacts 260.

Referring now to FIG. 12A, an exemplary high-density layout forlaterally diffused MOSFET (LDMOS) transistors 300 is shown. The layouttends to reduce turn-on drain-source resistance R_(DSon). Thetransistors 300 include source (S) regions 304, drain (D) regions 306and gates 310. Some, none or all of the source regions 304 may includeone or more source contacts 311. For illustration purposes, not all ofthe source regions 304 are shown with source contacts 311.

The gates 310 define a checkerboard pattern. Source regions 304 arearranged along sides of the drain regions 306. More particularly, thedrain regions 306 may have a generally rectangular shape. The sourceregions 304 may be arranged along each side of the generally rectangulardrain regions 306. Substrate contacts 330 may be provided adjacent tocorners of the drain regions 306 at intersections between adjacentsource regions 304. Drain contacts 334 may also be provided at a centrallocation within the drain regions 306.

Each drain region 306 may be arranged adjacent to source regions 304that are common with other adjacent drain regions 306. For example indotted area 331 in FIG. 12A, drain region 306-1 shares the source region304-1 with the drain region 306-2. Drain region 306-1 shares the sourceregion 304-2 with the drain region 306-3. Drain region 306-1 shares thesource region 304-3 with the drain region 306-4. Drain region 306-1shares the source region 304-4 with the drain region 306-5. This patternmay be repeated for adjacent drain regions 306.

Each of the drain regions 306 may have an area that is greater than orequal to two times the area of each of the source regions 304. In FIG.12A, the drain regions 306 have a width “b” and a height “a”. The sourceregions 304 have a width (or height) “d” and a height (or width) “c”.The drain regions 306 may have substantially the same length as thesource regions 304. The drain regions 306 may have greater than or equalto two times the width of the source regions 304.

Referring now to FIG. 12B, a more detailed view of part of the layout ofFIG. 12A is shown. Drain contacts 334-1 and 334-3 may be associated withdrain regions 306-1 and 306-3, respectively. Substrate contacts 330 arelocated adjacent to corners of the drain regions 306-1. Source contacts311-1, 311-2, . . . and 311-B may be arranged in source regions 304-2and 304-4, where B is an integer. Drain contacts 334-1 and 334-3 may bearranged in each of the drain regions 306-1 and 306-3, respectively.Drain contact 334-1 may define an area that is greater than the area ofthe source contact 311-1 in the source region 304-2.

Substantially all of the current flowing between the drain region 306-3and the source contacts 311-1, 311-2, . . . and 311-B of the adjacentsource region 304-2 flows between a facing portion 335 of the draincontact 334-3 and facing halves 337-1, 337-2, and 337-B of sourcecontacts 311-1, 311-2, . . . and 311-B in the source region 304-2.Current flows in a similar manner between other facing portions of thedrain contact 334-3 and source contacts (not shown) in other adjacentsource regions 304-5, 304-6 and 304-7.

Referring now to FIG. 12C, another exemplary high-density layout forlaterally diffused MOSFET (LDMOS) transistors 340 is shown. The layouttends to provide low turn-on drain-source resistance R_(DSon). Thetransistors 340 include source regions 304-11, 304-12, . . . 304-4Q,drain regions 306-11, 306-12, . . . 306-4T and gates 310, where Q and Tare integers. While four rows are shown in FIG. 12B, additional and/orfewer rows and/or columns may be employed. Some, none or all of thesource regions 304 may include source contacts 311. For illustrationpurposes, not all of the source regions 304 are shown with sourcecontacts. For example, source region 304-12 includes source contacts311-1, 311-2, . . . and 311-B, where B is an integer.

Other elongated source regions 344-1, 344-2, 344-3, . . . and 344-R arearranged between rows (or columns) of drain regions 306 and may bedriven by drivers 346-1, 346-2, . . . , and 346-R arranged on one orboth sides (or tops) of the layout in FIG. 12B. The elongated sourceregions 344-1, 344-2, 344-3, . . . and 344-R may extend adjacent tosides of at least two drain regions 306 such as at least drain regions306-11 and 306-12.

Each of the drain regions 306 (such as drain region 306-11) may have anarea that is greater than or equal to two times the area of each of thesource regions 304 (such as source region 304-12). The drain regions 306(such as drain region 306-11) may have substantially the same length asthe source regions 304 (such as source region 304-12). The drain regions306 (such as drain region 306-11) may have greater than or equal to twotimes the width of the source regions 304 (such as source region304-12).

Substrate contacts 347-11, 347-12, 347-21, 347-22, 347-23, . . . 347-51,347-52 (collectively substrate contacts 347) may be arranged in some,none or all of the elongated source regions 344. The placement andnumber of substrate contracts 347 may be uniform or varied for each ofthe elongated source regions 344. For example only, the substratecontacts 347 shown in FIG. 12C may be offset from the substrate contacts347 in adjacent elongated source regions 344. Each of the elongatedsource regions 344 may include the same number or a different number ofsubstrate contacts 347 than adjacent elongated source regions 344. Thesubstrate contacts 347 may be aligned or offset as shown. Some elongatedsource regions 344 may include no substrate contacts 347. Still othervariations are contemplated.

Referring now to FIG. 12D, first areas 345-A1, 345-A2, 345-A3 and 345-A4may provide useful transistor areas. For example, first areas 345-A1,345-A2, 345-A3 and 345-A4 may be located between drain region 306-12 andsource regions 304-12, 344-1, 304-13, and 344-2, respectively. Secondareas 345-B1, 345-B2, 345-B3 and 345-B4 may provide less usefultransistor areas. For example, second areas 345-B1, 345-B2, 345-B3 and345-B4 may be located between source regions 304-12, 344-1, 304-13, and344-2.

In some implementations, the substrate contacts 347-11, 347-12, 347-21,347-22, 347-23, . . . may be arranged in some, none or all of the secondareas 345-B1, 345-B2, 345-B3 and 345-B4 of the source regions 344-1,344-2, . . . and 344-R, for example as shown in FIG. 12D. The substratecontacts 347-11, 347-12, 347-21, 347-22, 347-23, . . . are shownarranged in the elongated substrate regions 344-1 and 344-2 and tend tolower RDS_ON. The substrate contacts 347-11, 347-12, 347-21, 347-22,347-23, . . . may have a height that is less than or equal to a width“c” of the source regions 304 (as shown in FIG. 12A) and a width that isless than or equal to a width “d” of the source regions 304 (as shown inFIG. 12A).

Referring now to FIG. 12E, substrate contacts 330-1 and 330-2 areprovided between pairs of elongated source regions 344-1A and 344-1B and344-2A and 344-2B, respectively. The elongated source regions 344-1A and344-2A are driven from one side by drivers 346-1A and 346-2A. Theelongated source regions 344-1 B and 344-2B are driven from another sideby drivers 346-1B and 346-2B.

Drain contacts 334 in FIGS. 12A-12E may have a minimum size or a sizethat is greater than the minimum size. Drain contacts 334 may have asimple or regular shape and/or an irregular or complex shape. Forexample, the drain contacts 334 may have a square or rectangular shape(as shown at 344 in FIG. 12A), a cross shape (as shown at 344-W in FIG.12F), clover-leaf shapes (as shown at 334-X and 334-Y in FIGS. 12G and12H, respectively), a modified cross-shaped region (as shown at 334-Z inFIG. 12I) and/or other suitable shapes such as but not limited todiamond, circular, symmetric, non-symmetric, etc. The substrate contacts347 may similarly have a simple or regular shape and/or an irregular orcomplex shape similar to the drain contacts 334.

In some implementations, the number of source contacts B in a givensource region may be an integer that is greater than one and less thansix. In some implementations, B may be equal to 3 or 4. The area of thedrain contact 334-3 may be greater than or equal to 2*B* (the area oneof source contacts 311-1, 311-2, . . . or 311-B). For example, when B isequal to 3, the drain contact region 334-3 may have an area that isapproximately greater than or equal to 6 times an area of one sourcecontact 311-1, 311-2, . . . or 311-B. When B is equal to 4, the draincontact region 334-3 may an area that is approximately greater than orequal to 8 times an area of one source contact 311-1, 311-2, . . . or311-B.

As the size of the drain contacts 334 increases relative to thecorresponding drain region 306, over-etching may occur. In other words,the etching process may adversely impact adjacent regions and/orunderlying layers. To alleviate the problems of over-etching, thecomplex shapes in FIGS. 12F-12I and/or other complex shapes can beemployed for the drain contacts 334. Alternately, the drain contacts 334can employ deep implant ions in and/or below the drain contacts 334.

As an alternative to placing the substrate contact 330 in the elongatedsource regions 344, a relief area may be provided in one or both sidesof the source region 344 in areas 345-B1, 345-B2, 345-B3 and 345-B. Asubstrate contact region 330 can be positioned in the relief area. Theshape of the elongate source region 344 can be adjusted on an oppositeside of the relief area to offset the effect of the relief area and toprevent reduction in current density in areas of the elongate sourceregion 344 near the relief areas.

Referring now to FIGS. 13-15, drain, source and gate regions can alsohave other shapes that can be used to minimize R_(DSon). For example,drain regions 348 can have a circular shape as shown in FIG. 13, anelliptical shape as shown in FIG. 14 and/or other suitable shapes. Gateregions 349 include circular-shaped gate regions 350 that are connectedby linear gate connecting regions 352. Similar elements are identifiedin FIG. 14 using a prime symbol (“′”). The drain regions 348 are locatedin the circular-shaped gate regions 350. Source regions 360 are locatedin between the gate regions 349 in areas other than the inside of thecircular shaped gate regions 350. Substrate contacts 364 are located inthe source regions 360. The drain regions 348 may also include a contactregion 366. The linear gate regions 352 may have a vertical spacing “g”that is minimized to increase density. Likewise, lateral spacingidentified at “f” between adjacent circular-shaped gate regions 350 maybe minimized to increase density.

Drain areas 368 can also have polygon shapes. For example, the drainareas can have a hexagon shape as shown in FIG. 15, although otherpolygon shapes can be used. Gate regions 369 include hexagon-shaped gateregions 370 that are connected by linear gate connecting regions 372.The drain regions 368 are located in the hexagon-shaped gate regions370. Source regions 380 are located in between the gate regions 369 inareas other than the inside of the hexagon-shaped gate regions 370.Substrate contacts 384 are located in the source regions 380. The drainregions may also include a contact region 386. The linear gateconnecting regions 372 preferably have a vertical spacing “j” that isminimized to increase density. Likewise lateral spacing identified at“i” between adjacent hexagon-shaped gate regions 370 is minimized toincrease density.

As can be appreciated, the shapes for the drain and gate areas in FIGS.13-15 can be any shape that is symmetric about at least one of thehorizontal and vertical centerlines of the drain areas. The transistorsin FIGS. 13-15 may be LDMOS transistors. The shape of the drain regionsmay include any symmetric shape. The shape may taper as a distance froma center point of the drain area increases and/or as a center point ofthe drain area increases in a direction towards one or more othertransistors.

Referring now to FIGS. 16A-16G, various exemplary implementationsincorporating the teachings of the present disclosure are shown.

Referring now to FIG. 16A, the teachings of the disclosure can beimplemented in a transistors of a hard disk drive (HDD) 400. The HDD 400includes a hard disk assembly (HDA) 401 and a HDD PCB 402. The HDA 401may include a magnetic medium 403, such as one or more platters thatstore data, and a read/write device 404. The read/write device 404 maybe arranged on an actuator arm 405 and may read and write data on themagnetic medium 403. Additionally, the HDA 401 includes a spindle motor406 that rotates the magnetic medium 403 and a voice-coil motor (VCM)407 that actuates the actuator arm 405. A preamplifier device 408amplifies signals generated by the read/write device 404 during readoperations and provides signals to the read/write device 404 duringwrite operations.

The HDD PCB 402 includes a read/write channel module (hereinafter, “readchannel”) 409, a hard disk controller (HDC) module 410, a buffer 411,nonvolatile memory 412, a processor 413, and a spindle/VCM driver module414. The read channel 409 processes data received from and transmittedto the preamplifier device 408. The HDC module 410 controls componentsof the HDA 401 and communicates with an external device (not shown) viaan I/O interface 415. The external device may include a computer, amultimedia device, a mobile computing device, etc. The I/O interface 415may include wireline and/or wireless communication links.

The HDC module 410 may receive data from the HDA 401, the read channel409, the buffer 411, nonvolatile memory 412, the processor 413, thespindle/VCM driver module 414, and/or the I/O interface 415. Theprocessor 413 may process the data, including encoding, decoding,filtering, and/or formatting. The processed data may be output to theHDA 401, the read channel 409, the buffer 411, nonvolatile memory 412,the processor 413, the spindle/VCM driver module 414, and/or the I/Ointerface 415.

The HDC module 410 may use the buffer 411 and/or nonvolatile memory 412to store data related to the control and operation of the HDD 400. Thebuffer 411 may include DRAM, SDRAM, etc. The nonvolatile memory 412 mayinclude flash memory (including NAND and NOR flash memory), phase changememory, magnetic RAM, or multi-state memory, in which each memory cellhas more than two states. The spindle/VCM driver module 414 controls thespindle motor 406 and the VCM 407. The HDD PCB 402 includes a powersupply 416 that provides power to the components of the HDD 400.

Referring now to FIG. 16B, the teachings of the disclosure can beimplemented in a transistors of a DVD drive 418 or of a CD drive (notshown). The DVD drive 418 includes a DVD PCB 419 and a DVD assembly(DVDA) 420. The DVD PCB 419 includes a DVD control module 421, a buffer422, nonvolatile memory 423, a processor 424, a spindle/FM (feed motor)driver module 425, an analog front-end module 426, a write strategymodule 427, and a DSP module 428.

The DVD control module 421 controls components of the DVDA 420 andcommunicates with an external device (not shown) via an I/O interface429. The external device may include a computer, a multimedia device, amobile computing device, etc. The I/O interface 429 may include wirelineand/or wireless communication links.

The DVD control module 421 may receive data from the buffer 422,nonvolatile memory 423, the processor 424, the spindle/FM driver module425, the analog front-end module 426, the write strategy module 427, theDSP module 428, and/or the I/O interface 429. The processor 424 mayprocess the data, including encoding, decoding, filtering, and/orformatting. The DSP module 428 performs signal processing, such as videoand/or audio coding/decoding. The processed data may be output to thebuffer 422, nonvolatile memory 423, the processor 424, the spindle/FMdriver module 425, the analog front-end module 426, the write strategymodule 427, the DSP module 428, and/or the I/O interface 429.

The DVD control module 421 may use the buffer 422 and/or nonvolatilememory 423 to store data related to the control and operation of the DVDdrive 418. The buffer 422 may include DRAM, SDRAM, etc. The nonvolatilememory 423 may include flash memory (including NAND and NOR flashmemory), phase change memory, magnetic RAM, or multi-state memory, inwhich each memory cell has more than two states. The DVD PCB 419includes a power supply 430 that provides power to the components of theDVD drive 418.

The DVDA 420 may include a preamplifier device 431, a laser driver 432,and an optical device 433, which may be an optical read/write (ORW)device or an optical read-only (OR) device. A spindle motor 434 rotatesan optical storage medium 435, and a feed motor 436 actuates the opticaldevice 433 relative to the optical storage medium 435.

When reading data from the optical storage medium 435, the laser driverprovides a read power to the optical device 433. The optical device 433detects data from the optical storage medium 435, and transmits the datato the preamplifier device 431. The analog front-end module 426 receivesdata from the preamplifier device 431 and performs such functions asfiltering and AID conversion. To write to the optical storage medium435, the write strategy module 427 transmits power level and timinginformation to the laser driver 432. The laser driver 432 controls theoptical device 433 to write data to the optical storage medium 435.

Referring now to FIG. 16C, the teachings of the disclosure can beimplemented in a transistors of a high definition television (HDTV) 437.The HDTV 437 includes a HDTV control module 438, a display 439, a powersupply 440, memory 441, a storage device 442, a WLAN interface 443 andassociated antenna 444, and an external interface 445.

The HDTV 437 can receive input signals from the WLAN interface 443and/or the external interface 445, which sends and receives informationvia cable, broadband Internet, and/or satellite. The HDTV control module438 may process the input signals, including encoding, decoding,filtering, and/or formatting, and generate output signals. The outputsignals may be communicated to one or more of the display 439, memory441, the storage device 442, the WLAN interface 443, and the externalinterface 445.

Memory 441 may include random access memory (RAM) and/or nonvolatilememory such as flash memory, phase change memory, or multi-state memory,in which each memory cell has more than two states. The storage device442 may include an optical storage drive, such as a DVD drive, and/or ahard disk drive (HDD). The HDTV control module 438 communicatesexternally via the WLAN interface 443 and/or the external interface 445.The power supply 440 provides power to the components of the HDTV 437.

Referring now to FIG. 16D, the teachings of the disclosure may beimplemented in a transistors of a vehicle 446. The vehicle 446 mayinclude a vehicle control system 447, a power supply 448, memory 449, astorage device 450, and a WLAN interface 452 and associated antenna 453.The vehicle control system 447 may be a powertrain control system, abody control system, an entertainment control system, an anti-lockbraking system (ABS), a navigation system, a telematics system, a lanedeparture system, an adaptive cruise control system, etc.

The vehicle control system 447 may communicate with one or more sensors454 and generate one or more output signals 456. The sensors 454 mayinclude temperature sensors, acceleration sensors, pressure sensors,rotational sensors, airflow sensors, etc. The output signals 456 maycontrol engine operating parameters, transmission operating parameters,suspension parameters, etc.

The power supply 448 provides power to the components of the vehicle446. The vehicle control system 447 may store data in memory 449 and/orthe storage device 450. Memory 449 may include random access memory(RAM) and/or nonvolatile memory such as flash memory, phase changememory, or multi-state memory, in which each memory cell has more thantwo states. The storage device 450 may include an optical storage drive,such as a DVD drive, and/or a hard disk drive (HDD). The vehicle controlsystem 447 may communicate externally using the WLAN interface 452.

Referring now to FIG. 16E, the teachings of the disclosure can beimplemented in a transistors of a cellular phone 458. The cellular phone458 includes a phone control module 460, a power supply 462, memory 464,a storage device 466, and a cellular network interface 467. The cellularphone 458 may include a WLAN interface 468 and associated antenna 469, amicrophone 470, an audio output 472 such as a speaker and/or outputjack, a display 474, and a user input device 476 such as a keypad and/orpointing device.

The phone control module 460 may receive input signals from the cellularnetwork interface 467, the WLAN interface 468, the microphone 470,and/or the user input device 476. The phone control module 460 mayprocess signals, including encoding, decoding, filtering, and/orformatting, and generate output signals. The output signals may becommunicated to one or more of memory 464, the storage device 466, thecellular network interface 467, the WLAN interface 468, and the audiooutput 472.

Memory 464 may include random access memory (RAM) and/or nonvolatilememory such as flash memory, phase change memory, or multi-state memory,in which each memory cell has more than two states. The storage device466 may include an optical storage drive, such as a DVD drive, and/or ahard disk drive (HDD). The power supply 462 provides power to thecomponents of the cellular phone 458.

Referring now to FIG. 16F, the teachings of the disclosure can beimplemented in a transistors of a set top box 478. The set top box 478includes a set top control module 480, a display 481, a power supply482, memory 483, a storage device 484, and a WLAN interface 485 andassociated antenna 486.

The set top control module 480 may receive input signals from the WLANinterface 485 and an external interface 487, which can send and receiveinformation via cable, broadband Internet, and/or satellite. The set topcontrol module 480 may process signals, including encoding, decoding,filtering, and/or formatting, and generate output signals. The outputsignals may include audio and/or video signals in standard and/or highdefinition formats. The output signals may be communicated to the WLANinterface 485 and/or to the display 481. The display 481 may include atelevision, a projector, and/or a monitor.

The power supply 482 provides power to the components of the set top box478. Memory 483 may include random access memory (RAM) and/ornonvolatile memory such as flash memory, phase change memory, ormulti-state memory, in which each memory cell has more than two states.The storage device 484 may include an optical storage drive, such as aDVD drive, and/or a hard disk drive (HDD).

Referring now to FIG. 16G, the teachings of the disclosure can beimplemented in a transistors of a media player 489. The media player 489may include a media player control module 490, a power supply 491,memory 492, a storage device 493, a WLAN interface 494 and associatedantenna 495, and an external interface 499.

The media player control module 490 may receive input signals from theWLAN interface 494 and/or the external interface 499. The externalinterface 499 may include USB, infrared, and/or Ethernet. The inputsignals may include compressed audio and/or video, and may be compliantwith the MP3 format. Additionally, the media player control module 490may receive input from a user input 496 such as a keypad, touchpad, orindividual buttons. The media player control module 490 may processinput signals, including encoding, decoding, filtering, and/orformatting, and generate output signals.

The media player control module 490 may output audio signals to an audiooutput 497 and video signals to a display 498. The audio output 497 mayinclude a speaker and/or an output jack. The display 498 may present agraphical user interface, which may include menus, icons, etc. The powersupply 491 provides power to the components of the media player 489.Memory 492 may include random access memory (RAM) and/or nonvolatilememory such as flash memory, phase change memory, or multi-state memory,in which each memory cell has more than two states. The storage device493 may include an optical storage drive, such as a DVD drive, and/or ahard disk drive (HDD).

Those skilled in the art can now appreciate from the foregoingdescription that the broad teachings of the present invention can beimplemented in a variety of forms. Therefore, while this invention hasbeen described in connection with particular examples thereof, the truescope of the invention should not be so limited since othermodifications will become apparent to the skilled practitioner upon astudy of the drawings, the specification and the following claims.

1. An integrated circuit comprising: a first drain region having agenerally rectangular shape; first, second, third and fourth sourceregions that have a generally rectangular shape and that are arrangedadjacent to sides of said first drain region; a gate region that isarranged between said first, second, third and fourth source regions andsaid first drain region; and first, second, third and fourth substratecontact regions that are arranged adjacent to corners of said firstdrain region.
 2. The integrated circuit of claim 1 wherein said first,second, third and fourth source regions have a length that issubstantially equal to a length of said first drain region.
 3. Theintegrated circuit of claim 1 wherein said first, second, third andfourth source regions have a width that is less than a width of saidfirst drain region.
 4. The integrated circuit of claim 3 wherein saidwidth of said first, second, third and fourth source regions isapproximately one-half the width of said first drain region.
 5. Theintegrated circuit of claim 1 further comprising a second drain regionhaving a generally rectangular shape and having one side that isarranged adjacent to said first source region; and fifth, sixth andseventh source regions that have a generally rectangular shape and thatare arranged adjacent to other sides of said second drain region.
 6. Theintegrated circuit of claim 5 further comprising a gate region that isarranged between said first, fifth, sixth and seventh source regions andsaid second drain region.
 7. The integrated circuit of claim 6 furthercomprising fifth and sixth substrate contact regions that are arrangedadjacent to corners of said second drain region.
 8. The integratedcircuit of claim 1 wherein said integrated circuit includeslaterally-diffused MOSFET transistors.
 9. The integrated circuit ofclaim 1 further comprising B source contacts in each of said first,second, third and fourth source regions, where B is an integer greaterthan one, and a drain contact region.
 10. The integrated circuit ofclaim 9 wherein said drain contact region includes first and seconddrain contacts that have an area D and said B source contacts have anarea A and wherein said area D is greater than or equal to 2*B*A.
 11. Amethod for providing an integrated circuit comprising: providing a firstdrain region having a generally rectangular shape; arranging sides offirst, second, third and fourth source regions, which have a generallyrectangular shape, adjacent to sides of said first drain region;arranging a gate region between said first, second, third and fourthsource regions and said first drain region; and arranging first, second,third and fourth substrate contact regions adjacent to corners of saidfirst drain region.
 12. The method of claim 11 wherein said first,second, third and fourth source regions have a length that issubstantially equal to a length of said first drain region.
 13. Themethod of claim 11 wherein said first, second, third and fourth sourceregions have a width that is less than a width of said first drainregion.
 14. The method of claim 11 wherein said width of said first,second, third and fourth source regions is approximately one-half thewidth of said first drain region.
 15. The method of claim 11 furthercomprising arranging one side of a second drain region, which has agenerally rectangular shape, adjacent to said first source region; andarranging fifth, sixth and seventh source regions, which have agenerally rectangular shape, adjacent to other sides of said seconddrain region.
 16. The method of claim 15 further comprising arranging agate region between said first, fifth, sixth and seventh source regionsand said second drain region.
 17. The method of claim 16 furthercomprising arranging fifth and sixth substrate contact regions adjacentto corners of said second drain region.
 18. The method of claim 11wherein said integrated circuit includes laterally-diffused MOSFETtransistors.
 19. The method of claim 11 further comprising arranging Bsource contacts in each of said first, second, third and fourth sourceregions, where B is an integer greater than one, and a drain contactregion in said drain region.
 20. The method of claim 19 wherein saiddrain contact region includes first and second drain contacts that havean area D and said B source contacts have an area A and wherein saidarea D is greater than or equal to 2*B*A.